James Robert Biard, Ph.D.
Chief Scientist - Retired
Honeywell MICRO SWITCH Division
Home Address: Business
Address:
207 Martha Manor
Honeywell
MICRO SWITCH
E-mail: Jrbiard@aol.com
E-mail:
bob.biard@honeywell.com
Home Telephone:
Work
Telephone:
(972) 235-6532
(972)
470-4203
(972) 235-6532 (FAX)
(972)
470-4278 (FAX)
Birth Date:
Marital Status: Married, 3 Children, 10 Grandchildren
EDUCATION:
Institution
Location
Date Degree
SOCIETY AFFILIATIONS:
Tau Beta Pi, Eta Kappa Nu, Phi Kappa Phi, Sigma Xi, American Physical Society, Fellow of IEEE, and member National Academy of Engineering.
WORK EXPERIENCE:
Dr. J. R. (Bob) Biard became Chief Scientist of the
Honeywell MICRO SWITCH Division in 1987.
He retired
PUBLICATIONS:
In the course of his technical career, Dr. Biard has
published more than two dozen technical papers and made about the same number
of unpublished presentations at major technical conferences. He also developed a one-week seminar on
Fiber Optic Data Transmission that he presented on five occasions in various
parts of the U.S.. Some of the key
papers are listed below:
W. T. Matzen and J. R. Biard, Differential Amplifier
Features D-C Stability," Electronics, January 16, 1959.
J. R. Biard, E. L. Bonin, W. N. Carr, and G. E.
Pittman, "GaAs Infrared Source," PGED Electron Device Conference,
Washington, D.C.; October 1962.
J. R. Biard, "Low frequency Reactance
Amplifier," IEEE Proc., Vol. 51, No. 2, pp. 298-303; February, 1963.
W. N. Carr, and J. R. Biard, "Common Occurrence
of Artifacts or 'Ghost' Peaks in Semiconductor Injection Electroluminescence
Spectra," Journal of Applied Physics, Vol. 35, No. 9, pp. 2776-2777;
September, 1964.
J. R. Biard, "Degradation of Quantum Efficiency
in GaAs Light Emitters," GaAs: 1966 Symposium Proceedings, (Reading England, September 1966),
Institute of Physics and Physical Society, pp. 113-117.
Ralph H. Johnson, Brian W. Johnson, and J. R. Biard,
"Unified Physical DC and AC MESFET Model for Circuit Simulation and Device
Modeling." IEEE Electron
Devices Transactions, September, 1987.
Ananth Ramaswamy, Jan P. van der Ziel, J. Robert
Biard, Ralph Johnson, and Jim A. Tatum, ˇ°Electrical Characteristics of
Proton-Implanted Vertical-Cavity Surface-Emitting Lasers,ˇ± IEEE Journal of
Quantum Electronics, Vol. 34, No. 11; November, 1998.
PATENTS:
Dr. Biard holds 35 U.S. and 17 foreign patents;
several other patents are pending.
Five of his more significant patents are listed below. These patents include one of the first
transistor DC differential amplifiers, the GaAs light emitting diode, the
optical isolator, Schottky clamped logic circuits, and the MOS read only memory
(ROM).
U.S. Patent No. 3,046,487, "Differential
Transistor Amplifier,ˇ± J. R. Biard and W. T. Matzen; July 24,
1962.
U.S. Patent No. 3,293,513, "Semiconductor Radiant
Diode,ˇ± J. R. Biard and G. E. Pittman; December 20, 1966.
U.S. Patent No. 3,304,431, "Photosensitive
Transistor Chopper,ˇ± J. R. Biard, E. L. Bonin, and J. S. Kilby;
February 14, 1967.
U.S. Patent No. 3,463,975, "Unitary Semiconductor
High-Speed Switching Device Using a Barrier Diode," J. R. Biard; August
26, 1969.
U.S. Patent No. 3,541,543, "MOS Binary Decoder,ˇ±
R. H. Crawford and J. R. Biard; May 20, 1969.