Course Description: This is a laboratory-oriented elective course for upper level undergraduates and first-year graduate students covering an overview of both silicon integrated circuits and III-V optoelectronics processing. Students will fabricate and characterize MOSFETS, visible semiconductor lasers, and submicron gratings (using holography). Lectures will discuss photolithography, oxidation, diffusion, ion-implantation, metalization, and etching. Silicon process modeling will use the CAD tool SUPREM. The AlGaInP lasers will be modeled using MODEIG. A laboratory report describing the projects will be peer-reviewed before final submission.

Prerequisites: either EE3311, graduate standing or permission of the instructor.

Time: lectures: MW: 3:00 - 4:20

lab sessions: MW: the core labtime is from 3:00 - 4:20; however students can arrange with Don Gulyas (MOSFET devices) or Jay Kirk (lasers and gratings) to come in earlier or to stay later. This reduces congestion in the clean room.

Location: Lectures: Caruth Hall 229

Lab Sessions: Solid State Technology Lab EL2 Room 205

Instructor: Gary Evans 319 Caruth Hall 768-3032 (office) 768-3573 (fax)

gae@seas.smu.edu (email)

Office Hours: M, W, F: 11:00 - 12:00; usually Sundays 2:00 - 4:00

Lab Instructors: Don Gulyas, Jay Kirk

Lab Assistants: to be announced

Required Text: Modular Series on Solid State Devices: Vol. 5, Introduction to Microelectronic Fabrication by R. C. Jaeger, Addison-Wesley, 1988.

DeForest - Photoresist: Materials and Processes

Ghandi - VLSI Fabrication Principles

Maly - Atlas of IC Technologies: An Introduction to VLSI Processes

Streetman - Solid State Electronic Devices

Sze - VLSI Technology

Subscriptions: Obtain a free subscription to the trade journal Laser Focus World by going to the homepage for PenWell Publishing Company (http://www.lfw.com/). Then click on the icon for Laser Focus World to reach the Laser Focus home page. Follow their instructions to submit an electronic application for a free subscription.

Notes/Materials: Extensive notes and handouts will be provided. A charge of $20 (cash or check) per student is required to defray costs for the notes, handouts, and laboratory materials. Please make checks out to "Electrical Engineering Department--EE 5312". Please provide payment to Shirley Braun in the Electrical Engineering office.

Exams: There will be one midterm and one final. All exams will be open book and open notes. Previous exams from this course will be provided.

Homework: Due Mondays, one week after assigned. Each problem is worth 10 points. Students are encouraged to work together on the homework, in person, by email (use the ee5312 newsgroup) or any other means. The solution manual to the problems in the text will be put on reserve in the library.

Grade Composition: midterm exam: 20%

CAD (SUPREM & MODEIG) projects: 10%

homework 20%

MOSFET lab report: 20%

laser and grating fab report 5%

final exam: 25%

Email/web: If you do not have access to electronic mail, you should contact a SEAS system manager at 214-768-4357 (214-SMU-HELP) to get an account. A newsgroup, "smu.seas.ee5312", has been set up for this course. If you have trouble subscribing, contact "manager@seas.smu.edu" by email. Postings to the ee5312 newsgroup can automatically appear in your mailbox by emailing "majordomo@seas.smu.edu" with the request "subscribe ee5312",

Disabilities: Southern Methodist University provides reasonable accommodations for students with disabilities. This University will adhere to all applicable federal, state, and local laws, regulations and guidelines with respect to providing reasonable accommodations. It is the students responsibility to contact the faculty member and/or the Services for Students with Disabilities at 768-4563 in a timely manner to arrange for appropriate accommodations.

1) field oxidation

2) first mask & diffusion

3) second mask & gate oxidation

4) third mask & contact etching

5) metal deposition, fourth mask & patterning

6) annealing

7) probing and characterization

1) silicon nitride

2) first mask & ridge etch

3) silicon nitride

4) second mask and p-metal contact opening

5) p-metal and thinning

6) n-metal and cleaving

3. complete MOSFET Lab Report is due Wednesday, April 8

--submit an original plus 2 copies

--each manuscript is given to 2 reviewers on April 8

4. Reviewer's comments on MOSFET reports are due back Wednesday April 15

Midterm Exam: Wednesday, March 4