About The Pictures

The circular 4 inch silicon wafer in the upper left hand corner was fabricated by SMU students in EE 5312. The microphotograph directly below shows the same wafer at a higher magnification. At this magnification, several of the complete cells can be see n. The bottom microphotograph in the same column is the same silicon wafer at an even higher magnification. The numbered devices (3 through 7) are MOSFETs with varying gate sizes. The icon for SMU's Dallas Hall, which is not any kind of semiconductor d evice, appears in every cell.

The rectangular die in the upper right hand corner is a microphotograph of a semiconductor laser chip with dimensions of approximately 250 µm x 250 µm. The light yellow color is a thin metalization layer of evaporated gold-zinc. The dark gold rectangle centered within the chip is a thicker layer of electroplated gold. A higher magnification of one end of the chip is shown directly below. This particular semiconductor laser emits infrared "light" with a wavelength of 1.55 µm. As shown in the bottom sc anning electron microscope (SEM) photograph, a 3 to 5 µm wide ridge is etched into the InGaAsP material down to a depth of about 1.5 µm. The channels on either side of the ridge are about 25 µm wide. This ridge provides the lateral optical confinement f or the laser light. This SEM photograph was taken midway through the processing steps, before evaporation of the metal contacts. Students in EE 5312 fabricate similar lasers using the material AlGaInP which emits visible light with a wavelength of 0.68 µm.


Old Exam

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Course Syllabus

EE 3311
Solid State Devices 
Fall 1995

COURSE SYLLABUS

Course Description:	From the catalog:  This course introduces the physical principles 
of semiconductor devices and their practical implementation in 
electronic circuits.  Topics include metal-semiconductor junctions, 
p-n junctions, bipolar junction transistors, field-effect transistors, 
integrated circuits, and light emitting diodes. 
	Comment:  the emphasis will be on the physical principles and the 
devices, not how the devices are used in circuits.  The detailed 
operation of the p-n junction diode is emphasized 

Time:  	M W F: 10:00 -10:50 AM

Location:  		Lectures:  Caruth Hall 128
  
Instructor:  	Gary Evans	319 Caruth Hall  768-3032 (office) 768-3883 (fax)
	gae@seas.smu.edu (email)

Office Hours: 	M W F   	11:00-12:00 AM (or by appointment)
	Sat		2:00-3:30 PM (call/email to make sure I am there)
	
Prerequisites:  	Chem 1303 and EE 2352 (according to the catalog).

 Required Text:	Solid State Electronic Devices, fourth edition, Ben G. Streetman, 
Prentice Hall, Englewood Cliffs, NJ  1990.  

Notes: 	Extensive notes and handouts will be provided.  A charge of $20 
(cash or check) per student is required to defray costs for the 
notes and handouts.  Please make checks out to "Electrical 
Engineering Department--EE 3311".  Please provide payment to 
Ms. Pam Hartman in the Electrical Engineering office.

Optional Texts:	The following books are placed on reserve in the Engineering and 
Science Library:

Three Degrees Above Zero, Jeremy Bernstein, New American 
Library, New York, 1986.
	
Modular Series on Solid State Devices, Volumes 1 through 4,
Robert F. Pierret and Gerold W. Neudeck, Editors, Addison-
Wesley Publishing Company, New York, 1990.
Volume 1:  Semiconductor Fundamentals, 2nd Edition, by 
Robert F. Pierret
Volume 2:  The PN Junction Diode, 2nd Edition, by Gerold W. 
Neudeck
Volume 3:  The Bipolar Junction Transistor, by Gerold W. 
Neudeck
Volume 4:  Field Effect Devices, by Robert F. Pierret.


In addition to the regulary assigned homework, each student is required to submit 
at least two one-page summaries of talks or presentations related to this course.  The 
summaries can be from the following videos which are available from the EE office or 
from Media Services.  The one-page summaries will be graded.  Additional summaries 
can be handed in for extra credit.  Each summary will count as 50 homework points.  
Some live seminars that will be presented at SMU (such as the SEAS Seminars) may 
qualify as a topic for one-page summaries.  Check with me in advance before preparing a 
one-page summary on a topic other than one of those listed below.

Videos:	
	Silicon Run 1;  Silicon Run 2 (this is a two-part series on 
integrated circuits covering crystal growth through IC fabrication)
	
	The Evolution of Microelectronics--History and Perspective (an 
SMU SEAS Seminar from Spring 1993 by Robert Dennard--SMU 
graduate and inventor of DRAM).

	Gigabit Lightwave Networks (an SMU SEAS Seminar by Ivan 
Kaminov from Spring 1993).

	High Definition TV and U. S. Competitiveness (an SMU SEAS 
Seminar by Michael Ettenberg from Spring 1993)

	A Unique Blend of High Technology and Feminist Strategy (an 
SMU SEAS Seminar by Judith Osmer and Virginia Carter from 
Spring 1994).

	Feynman Lecture No. 6:  Probability and Uncertainty (the 
behavior of electrons and photons according to the theories of 
quantum mechanics are discussed).
 
Exams:	Two midterms, one final, all will be closed book.  Some previous 
exams from this course will be provided.  Exams will be closed 
book with one page of notes on an 8.5" x 11" (you can write on 
both sides) sheet of paper for the first exam with one additional 
page allowed for each consecutive exam.  The page(s) of notes are 
to be handed with the exam and will be returned with the exam.  
Unlike homework,  the midterms and final are individual efforts.  
See attachments relating to the honor code.

Homework:	Due on Mondays (or the next class meeting when Monday is a 
holiday).  Each homework problem is worth 10 points.  Students 
are encouraged to work together on the homework, in person, by 
email (use the ee3311 newsgroup) or any other means.  Homework 
will be graded by a teaching assistant.

Grade Composition:	midterm 1:	22%
	midterm 2:	22%
	homework:      22% (includes one-page summaries)
	final exam:      34%

Email:	If you do not have access to electronic mail, you should contact the SEAS 
system manager, Doug Davis (214-768-3066, room 116 Caruth) to get an 
account.  A newsgroup, "smu.seas.ee3311", will be set up for this course.  
If you have trouble subscribing, contact "manager@seas.smu.edu" by 
email.

Disabilities: 	Southern Methodist University provides reasonable accommodations for 
students with disabilities.  This University will adhere to all applicable 
federal, state, and local laws, regulations and guidelines with respect to 
providing reasonable accommodations.  It is the students responsibility to 
contact the faculty member and/or the Services for Students with 
Disabilities at 768-4563 in a timely manner to arrange for appropriate 
accommodations. 					
   
	
Important Dates 

First one-page summary due:  Monday,  October 9
Second one-page summary due:  Monday, November 6

Midterm Exams:  Monday, October 2 and Friday, November 10
Final Exam:  Friday,  December 15,  8:00 - 11:00 AM

Course Schedule:

Week	Date		Course Topics

1	8/28, 30, 9/1	Ch 1, crystals
2	9/6, 8	Ch 2, quantum concepts
3	9/11, 13, 15	Ch 3,  energy bands and charge carriers
4	9/18, 20, 22	Ch 3, cont'd
5	9/25, 27, 29	Ch 3,
6	10/2, 4, 6	midterm #1 Ch4, excess carriers,
7	10/9, 11, 13	Ch 4 continued
8	10/16, 18, 20	diffusion Ch 5,  junctions
9	10/23, 25, 27, 	Ch 5 continued;
10	10/30, 1, 3	Ch 6 p-n junction devices
11	11/6, 8, 10	Ch 6 cont'd:  (diodes, detectors, solar cells, 	
		LEDs, LDs)
12	11/13, 15, 17	midterm #2  Ch 7 bipolar junction transistors
13	11/20, 22	Ch 7 continued (Thanksgiving)
14	11/27, 29, 12/1	Ch 8 field-effect transistors
15	12/4, 6, 8	Ch 8 cont'd; Ch 9 (integrated circuits/5312)

16	12/15	FINAL 8:00 - 11:00 AM

43 (effective) class meetings (15x3 - Labor Day and Thanksgiving Friday)
and with 2 midterms we have 41 "lectures" of 50 minutes.

Some Follow-on Courses to EE 3311:
EE 5312.  Semiconductor Processing Laboratory
Course Description:	This is a laboratory-oriented elective course for upper level 
undergraduates and first-year graduate students covering an overview of 
integrated circuit process technology.  Students will fabricate and 
characterize MOSFETS, visible semiconductor lasers, and 
submicron gratings (using holography).  Lectures will discuss 
photolithography, oxidation, diffusion, ion-implantation, metalization, 
and etching.  Process modeling will use the CAD tool SUPREM.  A 
laboratory report describing the projects will be peer-reviewed before 
final submission.  (From the course syllabus for EE 5312.)   

EE 5303.  Fiber Optic Telecommunications
Course Description:	This is an introductory course designed to familiarize students with 
practical concepts involved in optical fiber communications systems.  
Basic optical principles are reviewed.  Dielectric slab-waveguides, fiber 
waveguides and integrated optics devices are discussed.  The major 
compenents of a fiber communications link, including optical sources, 
detectors, and fibers are covered. .  (From the course syllabus for EE 
5303.)    

EE 5310.  Introduction to Semiconductors

EE 6310.  Electronic Processes (plus numerous other 6000 level courses)