EE 5312
Semiconductor Processing Laboratory
Spring 1997
Course Description: This is a laboratory-oriented elective course for upper level undergraduates and first-year graduate students covering an overview of both silicon integrated circuits and III-V optoelectronics processing. Students will fabricate and characterize MOSFETS, visible semiconductor lasers, and submicron gratings (using holography). Lectures will discuss photolithography, oxidation, diffusion, ion-implantation, metalization, and etching. Silicon process modeling will use the CAD tool SUPREM. The AlGaInP lasers will be modeled using MODEIG. A laboratory report describing the projects will be peer-reviewed before final submission.
Prerequisites: either EE3311, graduate standing or permission of the instructor.
Time: lectures: MW: 3:00 - 4:20
lab sessions: MW: the core labtime is from 3:00 - 4:20; however students can arrange with Don Gulyas (MOSFET devices) or Jay Kirk (lasers and gratings) to come in earlier or to stay later. This reduces congestion in the clean room.
Location: Lectures: Caruth Hall 224
Lab Sessions: Solid State Technology Lab EL2 Room 205
Instructor: Gary Evans 319 Caruth Hall 768-3032 (office) 768-3573 (fax)
gae@seas.smu.edu (email)
Office Hours: M, W, F: 11:00 - 12:00; usually Saturdays 2:00 - 4:00
Lab Instructors: Don Gulyas, Jay Kirk
Lab Assistants: Danielle Perry, J. P. Sih
Required Text: Modular Series on Solid State Devices: Vol. 5, Introduction to Microelectronic Fabrication by R. C. Jaeger, Addison-Wesley, 1988.
References: (will be put on reserve in the engineering and science library)
DeForest - Photoresist: Materials and Processes
Ghandi - VLSI Fabrication Principles
Maly - Atlas of IC Technologies: An Introduction to VLSI Processes
Streetman - Solid State Electronic Devices
Sze - VLSI Technology
Subscriptions: Obtain a free subscription to the trade journal Laser Focus World by going to the homepage for PenWell Publishing Company (http://www.lfw.com/). Then click on the icon for Laser Focus World to reach the Laser Focus home page. Follow their instructions to submit an electronic application for a free subscription.
Notes/Materials: Extensive notes and handouts will be provided. A charge of $20 (cash or check) per student is required to defray costs for the notes, handouts, and laboratory materials. Please make checks out to "Electrical Engineering Department--EE 5312". Please provide payment to Pam Hartman or Shirley Braun in the Electrical Engineering office.
Exams: There will be one midterm and one final. All exams will be open book and open notes. Previous exams from this course will be provided.
Homework: Due Mondays, one week after assigned. Each problem is worth 10 points. Students are encouraged to work together on the homework, in person, by email (use the ee5312 newsgroup) or any other means. The solution manual to the problems in the text will be put on reserve in the library.
Grade Composition: midterm exam: 20%
CAD (SUPREM & MODEIG) projects: 10%
homework 20%
lab report: 25%
final exam: 25%
Email/web: If you do not have access to electronic mail, you should contact a SEAS system manager at 214-768-4357 (214-SMU-HELP) to get an account. A newsgroup, "smu.seas.ee5312", has been set up for this course. If you have trouble subscribing, contact "manager@seas.smu.edu" by email. Postings to the ee5312 newsgroup can automatically appear in your mailbox by emailing "majordomo@seas.smu.edu" with the request "subscribe ee5312",
Disabilities: Southern Methodist University provides reasonable accommodations for students with disabilities. This University will adhere to all applicable federal, state, and local laws, regulations and guidelines with respect to providing reasonable accommodations. It is the students responsibility to contact the faculty member and/or the Services for Students with Disabilities at 768-4563 in a timely manner to arrange for appropriate accommodations.
OUTLINE OF SEMICONDUCTOR PROCESSING PROJECTS
I. Silicon MOSFET fabrication
--4-mask metal-gate MOSFET process:
1) field oxidation
2) first mask & diffusion
3) second mask & gate oxidation
4) third mask & contact etching
5) metal deposition, fourth mask & patterning
6) annealing
7) probing and characterization
II. AlGaInP Visible laser fabrication
--2-mask process:
1) silicon nitride
2) first mask & ridge etch
3) silicon nitride
4) second mask and p-metal contact opening
5) p-metal and thinning
6) n-metal and cleaving
7) probing and characterization
III. Grating Fabrication (no masks)
1) photoresist application
2) holographic exposure (Coherent UV Argon-Ion Laser, l = 3511 Å)
3) grating development, grating period measurement
MODELING PROJECTS
I. SUPREM: this computer program will be used to model oxidation, diffusion and ion-implantation in silicon.
II. MODEIG II: this computer program will be used to calculate the optical confinement factor and model the near- and far-fields of the AlGaInP visible laser structure.
LABORATORY REPORT (manuscript form)
1. See R. T. Compton, Jr., "Fourteen Steps to a Clearly Written Technical Paper", appearing in article by K. Werner "Technical Communications", IEEE Circuits and Devices, p. 54-56. September, 1992.
2. Outline of the MOSFET section of the report is due Wednesday, March 19
3. Outline of the Laser section of the report is due Wednesday, March 26
4. Outline of the Grating Fabrication section of the report is due Wednesday, April 2
3. complete Lab Report is due Wednesday, April 9
--submit an original plus 2 copies
--each manuscript is given to 2 reviewers on April 9
4. Reviewer's comments on manuscripts are due back Wednesday April 16
5. Final revised manuscript is due Monday, April 28. Include a) reviewers' comments, b) your response to the reviewers' comments, and c) a copy of the first version of your Lab Report with the final revised version of the Lab Report.
Important Dates
Midterm Exam: Wednesday, March 5
Spring Break: March 11 - 17
report outline: Wednesday, March 27
report due: Wednesday, April 10
reviews due: Wednesday, April 17
revised report due: Monday, April 29
Last day of instruction: Friday, May 5
Final Exam: Saturday, May 6, 11:30 AM - 2:30 PM
Course Schedule:
Week Date Course Topics
1 1/13, 1/15 Course and process overview, safety
2 1/22 Lithography
3 1/27, 1/29 Oxidation
4 2/3, 2/5 processing
5 2/10, 2/12 Diffusion, ion implantation
6 2/17, 2/19 Metalization
7 2/24, 2/26 Etching
8 3/3, 3/5 processing (MID-TERM EXAM)
9 3/10, 3/12 SPRING BREAK (no classes)
10 3/17, 3/19 MOSFET concepts
11 3/24, 3/26 processing
12 3/31, 4/2 processing
13 4/7, 4/9 semiconductor laser concepts
14 4/14, 4/16 holography/grating fabrication concepts
15 4/21, 4/23 processing
16 4/28, 4/30 processing
17 5/6 FINAL EXAM
PREVIOUS EE 5312 EXAMS
1992
1993
1995
1996
1997
Students wanting to calculate the confinement factors and near field
intensities for visible laser structures can download a copy of Modeig from
the following web site:
http://www.seas.smu.edu/modeig/